ibm dioxide hafnium 45nm

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POSTER: computer news   ||   IBM DIOXIDE HAFNIUM 45NM	DATE:2007-02-27
Researchers from laboratories IBM published the results of computer simulation, directed toward checking of possibility of applying the new promising material in the 45- nm technological process. As it follows from the published materials, after studying the behavior of computer model, scientists arrived at the conclusion about the possibility of applying the dioxide hafnium in chips of new generation. The mentioned material is key to the realization of the so-called technology high- k metal gate or metallic locks with the high value of dielectric constant. The dioxide of hafnium is presented by ideal candidate for the transistors of new generation. However, the introduction of any new material in the semiconductor production can involve unforeseen complexities; therefore such changes must be preliminary are thoroughly studied. This is why, notes IBM, it was important to model interaction of materials at the atomic level. Simulation was excuted on the super-computer blue gene/L. during the work specialists IBM used 50 models silicates hafnium f materials, formed with interaction of silicon and oxide hafnium. Into each model entered to 600 atoms and approximately 5000 electrons, stimilation of realistic system. For the calculation of one dielectric constant it departed five days of the machine time of two counters blue gene/L (4096 processors). Thus, on entire cycle of simulation were spent approximately 250 days. For the comparison the most powerful notebookt would be required to the solution of this problem about 700 years. In the series production of chips new material IBM plans to use already next year.	IBM DIOXIDE HAFNIUM 45NM

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