intel corporation declared about the intention to invest from 1 to 1,5 billion dollars. in the modernization of its production capacities in the Rio- ranch. After re-equipment the factory fab 11X will released microcircuits on the 45-nano production technology intel of the following generation. In accordance with the existing graph of passage on t 45- nm technical process the factory fab 11X will become the fourth production area intel, on which the microcircuits will be released on the new technology. The putting into commission of new production capacities in New Mexico is planned for the second-half of the following year.
45- nm production technology intel : one of the watersheds on the path of improvement in the structure of transistors after last 40 years. This production process implies the use of a metallic lock and dielectrics high- k : this update combination of new materials will allow to substantially decrease the leakage currents and to reduce the switch time of transistors. intel corporation will begin to release microcircuits on the new 45-nm production technology already in this year, using new dielectrics high- k (with the higher value of dielectric constant) and new combination of metals for preparing the electrode lock, which sequential time confirms its leading position in the semiconductor industry. The prototypes of the new family production, prepared on 45- nm echnology (under the code name penryn), are already operational - several different operating systems and applications were successfully neglected on them. As it was planned earlier, intel corporation was intended to begin the mass production of production on the basis of 45-nm production technology in the second-half of the present year.
The release of product intel on the new 45-nm production technology will begin at the research-experimental factory D 1d in Oregon. Now Intel builds the two additional factories, designed for the use of a 45-nm production process. The building fab 32 in Chendlere, pieces Arizona, will manage in 3 billions dollars ; its starting takes place already in the present year. In the building Of fab 28 in the - log paths (Israel) are inserted 3,5 billion dollars ; the discovery this factory is planned to first half of the following year.
Now Fab 11X manufactures microcircuits on 90 nm technology on the base of silicic base layers with diameter of 300 mm. this factory was opened during October 2002 it became the first factory Of intel, at which was mastered the mass production of microcircuits on the base of layers with a diameter of 300 mm. furthermore, this factory also became the first fully automated large-scale production Of intel on the production 300- mm silicic base layers.